| PART |
Description |
Maker |
| ECH8668 |
Power MOSFET, 20V, 7.5A, 17mOhm, -20V, -5A, 38mOhm, Complementary Dual ECH8
|
ON Semiconductor
|
| ITF87068SQT |
9A, 20V, 0.015 Ohm, P-Channel, 2.5V Specified Power MOSFET(9A, 20V, 0.015Ω P沟道2.5V专用功率MOS场效应管)
|
Intersil Corporation
|
| 2SC4727 |
NPN Epitaxial Planar Silicon Transistor 20V/8A Switching Applications
|
SANYO
|
| BCX6825TA BCX6825QTA |
20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89
|
Diodes Incorporated
|
| 2SC4836 2SC4836F |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | SIP 晶体管|晶体管|叩| 20V的五（巴西）总裁| 5A条一（c）|园区
20V/5A Switch Applications
|
STMicroelectronics N.V.
SANYO[Sanyo Semicon Device]
|
| SST3585 SST358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| STT358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| FDFMA2P85708 FDFMA2P857 |
-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ
Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode .20V, .3.0A, 120m惟
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode .20V, .3.0A, 120mΩ
|
Fairchild Semiconductor
|
| QS5U21 |
Transistors > MOS FET > TSMT3,5,6 Series
Small switching (?20V ?1.5A)
From old datasheet system
Small switching (-20V, -1.5A)
|
ROHM[Rohm]
|
| IRLR3715 IRLU3715 IRLR3715TRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 54A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 20V的五（巴西）直| 54A条（丁）|52AA
SMPS MOSFET
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF1902 IRF1B902 IRF1902TR |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)
|
International Rectifier
|
